BUK951R6-30E,127 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BUK951R6-30E,127
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Terminal Position: SINGLE; No. of Terminals: 3;
Datasheet	BUK951R6-30E,127 Datasheet
In Stock	3,450

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	1400 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	349 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0016 ohm
Avalanche Energy Rating (EAS):	1405 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101; IEC-60134
Maximum Drain Current (Abs) (ID):	120 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,450	-	-

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