NXP Semiconductors - BUK9608-55T/R

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BUK9608-55T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9608-55T/R
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 187 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 75 A;
Datasheet BUK9608-55T/R Datasheet
In Stock4,416
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 230 ns
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 240 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 187 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 435 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 187 W
Maximum Drain-Source On Resistance: .008 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 500 mJ
Maximum Feedback Capacitance (Crss): 480 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 75 A
Peak Reflow Temperature (C): 245
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