
Image shown is a representation only.
Manufacturer | NXP Semiconductors |
---|---|
Manufacturer's Part Number | BUK9MNN-65PKK,518 |
Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.57 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 7.1 A; Maximum Time At Peak Reflow Temperature (s): 30; |
Datasheet | BUK9MNN-65PKK,518 Datasheet |
In Stock | 4,454 |
NAME | DESCRIPTION |
---|---|
Maximum Power Dissipation (Abs): | 3.57 W |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (ID): | 7.1 A |
Maximum Drain Current (Abs) (ID): | 7.1 A |
Sub-Category: | FET General Purpose Power |
Peak Reflow Temperature (C): | 260 |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Moisture Sensitivity Level (MSL): | 3 |