NXP Semiconductors - BUK9MRR-65PKK,518

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BUK9MRR-65PKK,518 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK9MRR-65PKK,518
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; Maximum Drain Current (ID): 4.8 A; Moisture Sensitivity Level (MSL): 3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BUK9MRR-65PKK,518 Datasheet
In Stock4,603
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 3.2 W
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 4.8 A
Maximum Drain Current (Abs) (ID): 4.8 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Moisture Sensitivity Level (MSL): 3
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