LBE2009S by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	LBE2009S
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): .25 A; Maximum Collector-Emitter Voltage: 16 V;
Datasheet	LBE2009S Datasheet
In Stock	2,423

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC):	.25 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	3.5 W
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-CRDB-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	EMITTER
Maximum Power Dissipation Ambient:	3.5 W
Minimum Power Gain (Gp):	9 dB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	15
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	16 V
Additional Features:	HIGH RELIABILITY, DIFFUSED BALLAST RESISTORS

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,423	-	-

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