NXP Semiconductors - MHT1004GNR3

  1. Home
  2. NXP Semiconductors - MHT1004GNR3
MHT1004GNR3 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MHT1004GNR3
Description RF Power Field-Effect Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
Datasheet MHT1004GNR3 Datasheet
In Stock3,744
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Terminal Finish: TIN
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,744 $131.810 $493,496.640

Popular Products

Category Top Products

MRFE6VP5600HR6 by NXP Semiconductors

MRFE6VP5600HR6

NXP Semiconductors

NXP Semiconductors' MRFE6VP5600HR6 is an N-CHANNEL RF Power FET with 2 elements, operating in the ultra high frequency band. It has a max power dissipation of 1670W and can handle a min DS breakdown voltage of 130V. Commonly used as an amplifier, this transistor is designed for surface mount applications.
PD55003TR-E by STMicroelectronics

PD55003TR-E

STMicroelectronics

STMicroelectronics PD55003TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, 31.7W Power Dissipation, and operates up to 165°C temperature.
MRF1K50HR5 by NXP Semiconductors

MRF1K50HR5

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MMRF1015GNR1 by NXP Semiconductors

MMRF1015GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
STAC2942FW by STMicroelectronics

STAC2942FW

STMicroelectronics

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
934065223112 by NXP Semiconductors

934065223112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Terminals: 4; Terminal Position: DUAL; No. of Elements: 2;
FLC107WG by Fujitsu

FLC107WG

Fujitsu

FLC107WG by Fujitsu is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. It has a max power dissipation of 7.5W and can handle high frequencies up to C BAND. Ideal for applications requiring high-power amplification in the RF communication systems.
MRF184 by Motorola

MRF184

Motorola

MRF184 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 11.5 dB Power Gain, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a CERAMIC, METAL-SEALED COFIRED package and can handle up to 7A Drain Current with a max power dissipation of 118W at 200°C.
SD2942W by STMicroelectronics

SD2942W

STMicroelectronics

SD2942W by STMicroelectronics is a N-CHANNEL RF Power FET with 40A ID and 500W power dissipation. It operates at max temp of 200°C, suitable for high-power RF applications in various industries.
BLF147 by NXP Semiconductors

BLF147

NXP Semiconductors

The NXP Semiconductors BLF147 is a single N-channel RF Power FET with a very high frequency band. It has a max drain current of 25A, operating in enhancement mode for amplifier applications. With a package style of flange mount and ceramic-metal-sealed co-fired body material, it offers a max power dissipation of 220W at 200°C ambient temperature.
A2T09VD250NR1 by NXP Semiconductors

A2T09VD250NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
A2T18S160W31GSR3 by NXP Semiconductors

A2T18S160W31GSR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD55035STR-E by STMicroelectronics

PD55035STR-E

STMicroelectronics

STMicroelectronics PD55035STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 95W Power Dissipation. Ideal for high-power RF amplification needs.
SD56120 by STMicroelectronics

SD56120

STMicroelectronics

SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.
PD54008-E by STMicroelectronics

PD54008-E

STMicroelectronics

STMicroelectronics PD54008-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. With 5A Drain Current and 73W Power Dissipation, it's ideal for high-power amplification needs.
934065317118 by NXP Semiconductors

934065317118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F8; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 65 V;
934064588112 by NXP Semiconductors

934064588112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
SD3933 by STMicroelectronics

SD3933

STMicroelectronics

SD3933 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and can dissipate up to 648 W. Ideal for high-performance RF amplifiers, it operates efficiently in enhancement mode.
BLF6G13L-250P by NXP Semiconductors

BLF6G13L-250P

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Qualification: Not Qualified; Case Connection: SOURCE;
CGH25120F by Wolfspeed

CGH25120F

Wolfspeed

CGH25120F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the S BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor has a ceramic-metal package and is surface mountable.