NXP Semiconductors - MHW9189AN

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

Analog Devices' HMC606LC5TR-R5 is a wide band low power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 2-18 GHz. It can handle up to 15 dBm CW input power and operates in temperatures from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact component design.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND HIGH POWER;

NXP Semiconductors' MMG3002NT1 is a wide band low power RF amplifier with 19.3 dB gain, handling up to 12 dBm CW input power. Operating from 40 MHz to 3600 MHz, it's ideal for RF and microwave applications requiring high performance in a compact form factor.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;

The NXP Semiconductors MMG15241HT1 is a wide band medium power RF amplifier with 14 dB gain, operating from 500 MHz to 2800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, drawing up to 105 mA. This component is designed for surface mount applications in RF and microwave systems.

NARROW BAND MEDIUM POWER; Gain: 16.5 dB; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

Analog Devices' HMC8410LP2FETR is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

TE Connectivity's A64 is a RF & Microwave Amplifier with a metal package body. It operates at temperatures ranging from 0 to 50 °C and requires a power supply of 15V. With 4 terminals and a max supply current of 38mA, it is suitable for various applications in the field of RF and microwave amplification.

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.

Analog Devices' HMC8410LP2FE is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF applications requiring high performance in temperature range of -40°C to 85°C.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1700 MHz;

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Maximum Input Power (CW): 20 dBm; Gain: 18 dB; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Construction: COMPONENT;

Qorvo's RFPA3800TR13 is a GAAS technology wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for applications requiring high power amplification in RF & Microwave systems.