NXP Semiconductors - MHW9189AN

  1. Home
  2. NXP Semiconductors - MHW9189AN
MHW9189AN by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MHW9189AN
Description WIDE BAND HIGH POWER; Characteristic Impedance: 75 ohm; Gain: 19.7 dB; Maximum Operating Temperature: 100 Cel; Construction: MODULE; Maximum Operating Frequency: 870 MHz;
Datasheet MHW9189AN Datasheet
In Stock1,310
NAME DESCRIPTION
Construction: MODULE
Minimum Operating Frequency: 47 MHz
Characteristic Impedance: 75 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 870 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Minimum Operating Temperature: -20 Cel
Gain: 19.7 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,310 - -

Popular Products

Category Top Products

SBF-4089Z by Sirenza Microdevices

SBF-4089Z

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
ERA-5SM+ by Mini-circuits

ERA-5SM+

Mini-circuits

ERA-5SM+ by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, 50 ohm impedance, and 1.3 VSWR. It operates from 0 to 4000 MHz, handles up to 13 dBm input power, and has a compact surface mount package ideal for RF applications requiring amplification in the -45°C to 85°C temperature range.
RDA1005LTR13 by Rf Micro Devices

RDA1005LTR13

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; Characteristic Impedance: 50 ohm;
TQP7M9102-PCB900 by Qorvo

TQP7M9102-PCB900

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
HMC636ST89 by Analog Devices

HMC636ST89

Analog Devices

HMC636ST89 by Analog Devices is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications, this component is designed for surface mounting in RF and microwave systems.
SST13LP05-MLCF by Microchip Technology

SST13LP05-MLCF

Microchip Technology

SST13LP05-MLCF by Microchip Technology is a wide band medium power RF amplifier with 28 dB gain. It operates b/w 2400-2500 MHz, ideal for wireless communication applications. The component has 16 terminals, matte tin finish, and can handle temperatures from -40 to 85°C.
SGL0363Z by Qorvo

SGL0363Z

Qorvo

Qorvo's SGL0363Z is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2 GHz, handling up to 18 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.
AD8350ARMZ15 by Analog Devices

AD8350ARMZ15

Analog Devices

AD8350ARMZ15 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain, operating up to 1000 MHz. It can handle max input power of 8 dBm and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
TRF37D73IDSGT by Texas Instruments

TRF37D73IDSGT

Texas Instruments

TRF37D73IDSGT by Texas Instruments is a wide band low power RF amplifier with 20dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply with a current draw of 65mA. Ideal for applications requiring high frequency amplification in compact designs.
HMC414MS8GETR by Hittite Microwave

HMC414MS8GETR

Hittite Microwave

NARROW BAND MEDIUM POWER; JESD-609 Code: e3; Maximum Operating Frequency: 2800 MHz; Maximum Input Power (CW): 17 dBm; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn);
HMC463LP5ETR by Hittite Microwave

HMC463LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT;
QPA2611TR7 by Qorvo

QPA2611TR7

Qorvo

Qorvo's QPA2611TR7 is a GAN technology RF amplifier with 35.5 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals, surface-mountable on plastic/epoxy package body.
PHA-13LN+ by Mini-circuits

PHA-13LN+

Mini-circuits

Mini-circuits' PHA-13LN+ is a wideband low power RF amplifier with 20.2 dB gain, suitable for frequencies ranging from 1 MHz to 1000 MHz. It can handle up to 8 dBm CW input power and operates b/w -40°C to 105°C, making it ideal for various RF and microwave applications.
MAX2659ELT+T by Analog Devices

MAX2659ELT+T

Analog Devices

Analog Devices' MAX2659ELT+T is a BICMOS RF amplifier with 1.8/3V supplies, 6 terminals, and 5.6mA max supply current. It operates b/w -40°C to 85°C, features gold nickel terminal finish, and is ideal for surface mount applications in RF & microwave circuits.
ADL8142ACPZN-R7 by Analog Devices

ADL8142ACPZN-R7

Analog Devices

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.
MAR-3SM by Mini-circuits

MAR-3SM

Mini-circuits

The Mini-circuits MAR-3SM is a wide band low power RF amplifier with 8 dB gain and 50 ohm impedance. It operates from 0 to 2000 MHz, handling up to 13 dBm input power. Ideal for RF & microwave applications requiring compact, surface mount components with high performance.
SGA-2463Z by Sirenza Microdevices

SGA-2463Z

Sirenza Microdevices

SGA-2463Z by Sirenza Microdevices is a wide band low power RF amplifier with a gain of 17.1 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
MGA-81563-BLK by Agilent Technologies

MGA-81563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC549MS8GTR by Analog Devices

HMC549MS8GTR

Analog Devices

Analog Devices' HMC549MS8GTR is a GaAs technology RF amplifier with 5V power supply, operating b/w -40°C to 85°C. It features wideband low power performance in a surface mount package, ideal for RF and microwave applications.
RFSA2113SR by Rf Micro Devices

RFSA2113SR

Rf Micro Devices

WIDE BAND MEDIUM POWER;