MIMX8ML8CVNKZAB by NXP Semiconductors | Peripheral ICs

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	MIMX8ML8CVNKZAB
Description	MULTIFUNCTION PERIPHERAL; Temperature Grade: INDUSTRIAL; Terminal Form: BALL; No. of Terminals: 548; Package Code: LFBGA; Package Shape: SQUARE;
Datasheet	MIMX8ML8CVNKZAB Datasheet
In Stock	105

NAME	DESCRIPTION
Minimum Supply Voltage:	.805 V
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	.85 V
Maximum Time At Peak Reflow Temperature (s):	40
Maximum Seated Height:	1.481 mm
Surface Mount:	YES
No. of Terminals:	548
No. of Serial I/Os:	16
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, LOW PROFILE, FINE PITCH
No. of I/O Lines:	160
Address Bus Width:	0
Technology:	CMOS
RAM Words:	888832
JESD-30 Code:	S-PBGA-B548
Maximum Clock Frequency:	24 MHz
Package Shape:	SQUARE
Terminal Form:	BALL
Maximum Operating Temperature:	105 Cel
Package Code:	LFBGA
Width:	15 mm
Moisture Sensitivity Level (MSL):	3
Peripheral IC Type:	MULTIFUNCTION PERIPHERAL
Maximum Supply Voltage:	.9 V
Boundary Scan:	YES
External Data Bus Width:	0
Minimum Operating Temperature:	-40 Cel
Package Equivalence Code:	BGA548,29X29,20
Length:	15 mm
Additional Features:	ALSO OPERATES @ 0.9-1V SUPPLY IN OVERDRIVE MODE
Peak Reflow Temperature (C):	260
Bus Compatibility:	ETHERNET, I2C, I2S, PCI, SPI, UART, USB
Terminal Pitch:	.5 mm
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
105	-	-

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;

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STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;