NXP Semiconductors - MMRF1312HR5

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MMRF1312HR5 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MMRF1312HR5
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 4;
Datasheet MMRF1312HR5 Datasheet
In Stock2,972
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Surface Mount: YES
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Minimum Power Gain (Gp): 18.5 dB
Other Names: MMRF1312HR5TR
935316216178
MMRF1312HR5-ND
MMRF1312HR5CT
MMRF1312HR5DKR
Maximum Feedback Capacitance (Crss): 2.5 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 112 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
2,972 $543.580 $1,615,519.760

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