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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | MMRF5014H-200MHZ |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 150 V; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED; |
| Datasheet | MMRF5014H-200MHZ Datasheet |
| In Stock | 2,840 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 17 dB |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM NITRIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Feedback Capacitance (Crss): | 1 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 2 |
| Minimum DS Breakdown Voltage: | 150 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-CDFM-F2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | S BAND |
| Maximum Operating Temperature: | 225 Cel |
| Case Connection: | SOURCE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
