NXP Semiconductors - MRF24300NR3

  1. Home
  2. NXP Semiconductors - MRF24300NR3
MRF24300NR3 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF24300NR3
Description RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
Datasheet MRF24300NR3 Datasheet
In Stock239
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Terminal Finish: TIN
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
239 $19.200 $4,588.800

Popular Products

Category Top Products

BLF6G15LS-40RN by NXP Semiconductors

BLF6G15LS-40RN

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
MRF186 by Motorola

MRF186

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified; Transistor Element Material: SILICON;
934065183112 by NXP Semiconductors

934065183112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Additional Features: HIGH RELIABILITY; Minimum DS Breakdown Voltage: 65 V;
MRF374 by Motorola

MRF374

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Elements: 2;
BLF6G10S-45 by NXP Semiconductors

BLF6G10S-45

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 2;
BLF871S,112 by Ampleon Netherlands B V

BLF871S,112

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
PD84002 by STMicroelectronics

PD84002

STMicroelectronics

STMicroelectronics PD84002 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.
SD3931-10 by STMicroelectronics

SD3931-10

STMicroelectronics

SD3931-10 by STMicroelectronics is an N-channel RF power FET designed for high-frequency applications. It features a max drain current of 10 A, a breakdown voltage of 250 V, and operates at temperatures up to 200 °C. Ideal for enhancing performance in demanding RF circuits.
MRF1513T1 by Motorola

MRF1513T1

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): CHIP CARRIER;
934064687118 by NXP Semiconductors

934064687118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
CLF1G0035S-100 by Ampleon Netherlands B V

CLF1G0035S-100

Ampleon Netherlands B V

RF Power Field-Effect Transistors;
A3V26S004NT6 by NXP Semiconductors

A3V26S004NT6

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;
PD57045S-E by STMicroelectronics

PD57045S-E

STMicroelectronics

PD57045S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, breakdown voltage of 65 V, and operates in the ultra-high frequency band. Ideal for compact designs with high power dissipation up to 73 W.
PD57006TR-E by STMicroelectronics

PD57006TR-E

STMicroelectronics

PD57006TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in compact designs with high power dissipation up to 20 W.
BLF6G27S-45 by NXP Semiconductors

BLF6G27S-45

NXP Semiconductors

The NXP Semiconductors BLF6G27S-45 is an RF Power FET with a 65V DS breakdown voltage and 20A drain current. It operates in enhancement mode, suitable for S band applications like amplifiers. The package is ceramic-metal sealed co-fired, flatpack style with dual terminals and a max temperature of 150°C.
934065241112 by NXP Semiconductors

934065241112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;
A2V07H400-04NR3 by NXP Semiconductors

A2V07H400-04NR3

NXP Semiconductors

NXP Semiconductors A2V07H400-04NR3 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 18.9 dB Power Gain, and operates in the Ultra High Frequency Band. Ideal for amplifier applications, this transistor has a flatpack package style and operates b/w -40 to 225 °C.
934056522112 by NXP Semiconductors

934056522112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 12 A; Package Shape: RECTANGULAR;
A2T18S165-12SR3 by NXP Semiconductors

A2T18S165-12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
AFG24S100HR5 by NXP Semiconductors

AFG24S100HR5

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;