NXP Semiconductors - MRF24G300H

MRF24G300H by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF24G300H
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet MRF24G300H Datasheet
In Stock2,374
NAME DESCRIPTION
Minimum Power Gain (Gp): 14.9 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
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