NXP Semiconductors - MRF8S26120HR3

MRF8S26120HR3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRF8S26120HR3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Case Connection: SOURCE; Terminal Form: FLAT;
In Stock1,252
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): NOT APPLICABLE
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Pricing (USD)

Qty. Unit Price Ext. Price
1,252 $17.850 $22,348.200

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