NXP Semiconductors - MRFE6VP61K25HSR5

  1. Home
  2. NXP Semiconductors - MRFE6VP61K25HSR5
MRFE6VP61K25HSR5 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFE6VP61K25HSR5
Description N-CHANNEL; Maximum Power Dissipation (Abs): 1300 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel; Maximum Time At Peak Reflow Temperature (s): 40;
In Stock1,201
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1300 W
Maximum Time At Peak Reflow Temperature (s): 40
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 225 Cel
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,201 $217.060 $260,689.060

Popular Products

Category Top Products

CGHV40030P by Wolfspeed

CGHV40030P

Wolfspeed

CGHV40030P by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring Gallium Nitride technology, it operates from -40 to 85 °C with a max ID of 4.2A and Crss of 0.15pF in a METAL-SEALED COFIRED package.
MRF141G by Motorola

MRF141G

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Power Dissipation Ambient: 500 W; Operating Mode: ENHANCEMENT MODE;
934056583112 by NXP Semiconductors

934056583112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Transistor Application: AMPLIFIER; Terminal Position: DUAL;
SD2918 by STMicroelectronics

SD2918

STMicroelectronics

SD2918 by STMicroelectronics is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 6A Drain Current. It operates in the Ultra High Frequency Band, suitable for high-power applications. With a max power dissipation of 175W and operating temperature up to 200 °C, it is ideal for demanding RF power amplification needs.
MW6S004NT1 by Freescale Semiconductor

MW6S004NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
PD84008-E by STMicroelectronics

PD84008-E

STMicroelectronics

PD84008-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
934061301112 by NXP Semiconductors

934061301112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
MRF6V10010NR4 by Freescale Semiconductor

MRF6V10010NR4

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
AFT20P060-4NR3 by Freescale Semiconductor

AFT20P060-4NR3

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Matte Tin (Sn);
BLF246 by Asi Semiconductor

BLF246

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Transistor Element Material: SILICON; Qualification: Not Qualified;
MMRF5300NR5 by NXP Semiconductors

MMRF5300NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
CLF1G0035-50,112 by Ampleon Netherlands B V

CLF1G0035-50,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Transistor Element Material: GALLIUM NITRIDE; Terminal Form: FLAT;
PD55003L-E by STMicroelectronics

PD55003L-E

STMicroelectronics

STMicroelectronics PD55003L-E is an N-CHANNEL RF FET with 40V DS breakdown voltage, ideal for amplifier applications in the UHF band. It operates in enhancement mode, with a max drain current of 2.5A and power dissipation of 14W. The chip carrier package style and matte tin terminal finish make it suitable for high-frequency circuit designs.
TSD2922 by STMicroelectronics

TSD2922

STMicroelectronics

TSD2922 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V. Operating in the Ultra High Frequency Band, it has a max temperature of 200 °C. This transistor is commonly used in applications requiring high power and frequency performance, such as telecommunications and radar systems.
A2T14H450-23NR6 by NXP Semiconductors

A2T14H450-23NR6

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND;
LET8180 by STMicroelectronics

LET8180

STMicroelectronics

LET8180 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 289 W.
934061559118 by NXP Semiconductors

934061559118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
TSD2904 by STMicroelectronics

TSD2904

STMicroelectronics

TSD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 7A, making it ideal for amplifier applications. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures up to 200 °C.
A5G07H800W19NR3 by NXP Semiconductors

A5G07H800W19NR3

NXP Semiconductors

RF Power Field-Effect Transistors;
PTVA101K02EVV1 by Wolfspeed

PTVA101K02EVV1

Wolfspeed

RF Power Field-Effect Transistors;