NXP Semiconductors - MRFE6VP6600GNR3

  1. Home
  2. NXP Semiconductors - MRFE6VP6600GNR3
MRFE6VP6600GNR3 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFE6VP6600GNR3
Description RF Small Signal Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
In Stock1,202
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 40
Peak Reflow Temperature (C): 260
Terminal Finish: TIN
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,202 $95.210 $114,442.420

Popular Products

Category Top Products

BLM7G1822S-40PB by NXP Semiconductors

BLM7G1822S-40PB

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
BF990A-T by NXP Semiconductors

BF990A-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Package Shape: RECTANGULAR;
BF996S-T by NXP Semiconductors

BF996S-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Operating Mode: DUAL GATE, DEPLETION MODE; Qualification: Not Qualified;
J211-D74Z by Onsemi

J211-D74Z

Onsemi

The Onsemi J211-D74Z is an N-CHANNEL RF FET with a PLASTIC/EPOXY package. Operating in DEPLETION MODE, it offers a max power dissipation of 0.35W and can handle temperatures up to 150°C. Ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND.
BF556A-TAPE-13 by NXP Semiconductors

BF556A-TAPE-13

NXP Semiconductors

BF556A-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
2N4223 by Texas Instruments

2N4223

Texas Instruments

2N4223 by Texas Instruments is an N-CHANNEL RF FET with 30V DS Breakdown Voltage, 10 dB Power Gain, and 0.02A Drain Current. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to DEPLETION MODE operation. Package: METAL, Shape: ROUND, Technology: JUNCTION.
BF980A by NXP Semiconductors

BF980A

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified; Terminal Form: FLAT;
BF2030WE6327 by Infineon Technologies

BF2030WE6327

Infineon Technologies

BF2030WE6327 by Infineon Technologies is an N-CHANNEL RF FET with 10V DS Breakdown Voltage, 20dB Power Gain, and 0.2W Power Dissipation. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to DUAL GATE, DEPLETION MODE operation. Package: PLASTIC/EPOXY, Surface Mountable with GULL WING terminals.
NTE312 by Nte Electronics

NTE312

Nte Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: O-PBCY-W3; Qualification: Not Qualified;
BF997 by NXP Semiconductors

BF997

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
J308RL by Onsemi

J308RL

Onsemi

J308RL by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
J310RLRE by Onsemi

J310RLRE

Onsemi

J310RLRE by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance with a Max Operating Temperature of 125 °C. This THROUGH-HOLE transistor features a PLASTIC/EPOXY body and has 3 terminals in a CYLINDRICAL package style.
MMBF5486 by Fairchild Semiconductor

MMBF5486

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Operating Mode: DEPLETION MODE; Transistor Element Material: SILICON;
ATF-54143-BLKG by Broadcom

ATF-54143-BLKG

Broadcom

Broadcom ATF-54143-BLKG is a N-channel FET with 5V DS breakdown voltage, 15dB power gain, and operates in C band. Ideal for amplifier applications, it has a max drain current of 0.12A and can handle up to 0.725W power dissipation at 150°C.
ATF-54143-BLKG by Agilent Technologies

ATF-54143-BLKG

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; Qualification: Not Qualified;
2N5486RLRE by Onsemi

2N5486RLRE

Onsemi

2N5486RLRE by Onsemi is an N-CHANNEL RF FET with a single configuration for AMPLIFIER applications. It offers a Min Power Gain of 10 dB and operates in DEPLETION MODE at up to 150 °C. This ULTRA HIGH FREQUENCY transistor has a Max Drain Current of 0.03 A and Max Feedback Capacitance of 1 pF, making it suitable for high-frequency amplification needs.
934031470115 by NXP Semiconductors

934031470115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; JESD-609 Code: e3; Terminal Position: DUAL;
2N4416A by Central Semiconductor

2N4416A

Central Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Package Shape: ROUND;
934055136115 by NXP Semiconductors

934055136115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Maximum Feedback Capacitance (Crss): .035 pF; Package Body Material: PLASTIC/EPOXY;
BF245RL by Onsemi

BF245RL

Onsemi

BF245RL by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.