NXP Semiconductors - MRFG35003M6T1

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MRFG35003M6T1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MRFG35003M6T1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 22.7 W; Package Body Material: PLASTIC/EPOXY;
Datasheet MRFG35003M6T1 Datasheet
In Stock4,675
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Transistor Application: AMPLIFIER
Sub-Category: FET RF Small Signal
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 4
Terminal Position: QUAD
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PQSO-N4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: DEPLETION MODE
Highest Frequency Band: C BAND
Maximum Operating Temperature: 85 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 22.7 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 8 V
Qualification: Not Qualified
Additional Features: HIGH EFFICIENCY
Peak Reflow Temperature (C): 260
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