NE649N by NXP Semiconductors | General Purpose ICs

Image shown is a representation only.

Manufacturer	NXP Semiconductors
Manufacturer's Part Number	NE649N
Description	DOLBY NOISE REDUCTION IC; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR;
Datasheet	NE649N Datasheet
In Stock	4,833

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Seated Height:	4.06 mm
Minimum Supply Voltage (Vsup):	6 V
Surface Mount:	NO
Nominal Dolby Level:	580 mV
Terminal Finish:	TIN/NICKEL PALLADIUM GOLD
No. of Terminals:	16
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T16
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	70 Cel
No. of Channels:	1
Package Code:	DIP
General IC Type:	DOLBY NOISE REDUCTION IC
Width:	7.62 mm
Harmonic Distortion:	.2 %
JESD-609 Code:	e3/e4
Minimum Operating Temperature:	0 Cel
Mode (Playback/Record):	PLAYBACK AND RECORD
No. of Functions:	1
Qualification:	Not Qualified
Length:	19.09 mm
Dolby Type:	B
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	14 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,833	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;

FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10000 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.