NXP Semiconductors - OM7820

  1. Home
  2. NXP Semiconductors - OM7820
OM7820 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number OM7820
Description NARROW BAND LOW POWER;
Datasheet OM7820 Datasheet
In Stock3,326
NAME DESCRIPTION
RF or Microwave Device Type: NARROW BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,326 - -

Popular Products

Category Top Products

SKY65160-11 by Skyworks Solutions

SKY65160-11

Skyworks Solutions

RF/Microwave Amplifiers;
HMC606LC5TR by Hittite Microwave

HMC606LC5TR

Hittite Microwave

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 15 dBm; Maximum Operating Frequency: 18000 MHz; Minimum Operating Temperature: -40 Cel;
MSA-1105-TR1G by Agilent Technologies

MSA-1105-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1300 MHz; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB;
935363184528 by NXP Semiconductors

935363184528

NXP Semiconductors

WIDE BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
HMC462 by Analog Devices

HMC462

Analog Devices

Analog Devices' HMC462 RF amplifier offers 12.5 dB gain, 18 dBm CW input power, and 1.25 max VSWR. Ideal for wideband low-power applications from 2-20 GHz, with PHEMT tech and surface mounting feature.
HMC326MS8GE by Hittite Microwave

HMC326MS8GE

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 4500 MHz;
MSA-1105-STR by Agilent Technologies

MSA-1105-STR

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 50 MHz;
HMC994A by Analog Devices

HMC994A

Analog Devices

Analog Devices' HMC994A is a wide band medium power RF amplifier with 12.5 dB gain, handling up to 25 dBm CW input power. With a VSWR of 7, it operates from -55°C to 85°C, making it ideal for various RF and microwave applications up to 30 GHz.
MGA-72543-TR1G by Agilent Technologies

MGA-72543-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.
HMC1040LP3CETR by Analog Devices

HMC1040LP3CETR

Analog Devices

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.
AC1226 by Teledyne Cougar

AC1226

Teledyne Cougar

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Minimum Operating Temperature: -55 Cel; Maximum Supply Current: 79 mA; Package Equivalence Code: CAN4,.3;
MAX2630EUS-T by Maxim Integrated

MAX2630EUS-T

Maxim Integrated

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.
HMC636ST89E by Hittite Microwave

HMC636ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
SPF5043ZSQ by Rf Micro Devices

SPF5043ZSQ

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11.4 dB;
MAAL-011129-TR1000 by M/a-com Technology Solutions

MAAL-011129-TR1000

M/a-com Technology Solutions

MAAL-011129-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.
QPA2611TR7 by Qorvo

QPA2611TR7

Qorvo

Qorvo's QPA2611TR7 is a GAN technology RF amplifier with 35.5 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals, surface-mountable on plastic/epoxy package body.
HMC717ALP3E by Analog Devices

HMC717ALP3E

Analog Devices

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.
TGA2214-CP by Qorvo

TGA2214-CP

Qorvo

WIDE BAND HIGH POWER;
HMC549MS8G by Hittite Microwave

HMC549MS8G

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;