NXP Semiconductors - ON5520215

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ON5520215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number ON5520215
Description Small Signal Field-Effect Transistors;
Datasheet ON5520215 Datasheet
In Stock8,789
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MGSF1N02LT1G by Onsemi

MGSF1N02LT1G

Onsemi

MGSF1N02LT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.09 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
BSD316SNH6327XTSA1 by Infineon Technologies

BSD316SNH6327XTSA1

Infineon Technologies

Infineon's BSD316SNH6327XTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for automotive applications. Featuring single configuration with built-in diode, it has 6 terminals in gull wing form and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150 °C operating temp, it offers low 0.0016 ohm RDS(on) for efficient performance.
2N7002K by Diodes Incorporated

2N7002K

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .3 A; Maximum Feedback Capacitance (Crss): 5 pF; Terminal Form: GULL WING;
DMG1012UW-7 by Diodes Incorporated

DMG1012UW-7

Diodes Incorporated

DMG1012UW-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.45 ohm on-resistance. Its small outline package and -55 to 150°C operating range make it suitable for various electronic devices.
2N7002L by Onsemi

2N7002L

Onsemi

Onsemi's 2N7002L is a N-CHANNEL FET with 60V DS breakdown voltage, 0.115A ID, and 7.5 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. Its small outline package and surface mount capability make it versatile for various electronic designs.
BSS138 by Onsemi

BSS138

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
SI2333CDS-T1-GE3 by Vishay Intertechnology

SI2333CDS-T1-GE3

Vishay Intertechnology

SI2333CDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 12V DS Breakdown Voltage, 7.1A Drain Current, and 0.035 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Suitable for surface mount designs with GULL WING terminals in a RECTANGULAR package shape.
BSS138 by Inter F E T

BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
NTR4171PT1G by Onsemi

NTR4171PT1G

Onsemi

NTR4171PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 2.2A max drain current, and 0.075 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.25W at 150°C.
FDC638P by Fairchild Semiconductor

FDC638P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .048 ohm; Terminal Position: DUAL;
FDV304P-F169 by Onsemi

FDV304P-F169

Onsemi

Onsemi's FDV304P-F169 is a P-CHANNEL FET for switching applications. It features a 25V DS breakdown voltage, 0.46A max drain current, and 1.1 ohm max on resistance. With a small outline package style and GULL WING terminals, it operates in enhancement mode at -55 to 150 °C temperature range.
SI2315BDS-T1-E3 by Vishay Intertechnology

SI2315BDS-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI2315BDS-T1-E3 is a P-CHANNEL FET with 12V DS Breakdown Voltage, 2.8A Drain Current, and 0.05 ohm On Resistance. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and -55 to 150 °C operating temperature range.
FDY300NZ by Onsemi

FDY300NZ

Onsemi

FDY300NZ by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.6A Drain Current, and 0.7 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package suitable for surface mount technology.
BSS84P-E6327 by Infineon Technologies

BSS84P-E6327

Infineon Technologies

BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
2N7002 by Dc Components

2N7002

Dc Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
MMBF4117 by Fairchild Semiconductor

MMBF4117

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
ZVP2106ASTOB by Zetex Plc

ZVP2106ASTOB

Zetex Plc

ZVP2106ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 200°C.
PMV65XPEAR by Nexperia

PMV65XPEAR

Nexperia

PMV65XPEAR by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.8A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. AEC-Q101 & IEC-60134 compliant, it operates in ENHANCEMENT MODE with 0.078 ohm RDS(on).
BSS138-G by Comchip Technology

BSS138-G

Comchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
MMBF170Q-13-F by Diodes Incorporated

MMBF170Q-13-F

Diodes Incorporated

Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;