PHB42N03LT118 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PHB42N03LT118
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .026 ohm;
Datasheet	PHB42N03LT118 Datasheet
In Stock	3,511

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	60 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	42 A
Maximum Pulsed Drain Current (IDM):	168 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE, FAST SWITCHING
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.026 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,511	-	-

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