NXP Semiconductors - PHKD3NQ10T,118

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PHKD3NQ10T,118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHKD3NQ10T,118
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 3 A; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 150 Cel;
Datasheet PHKD3NQ10T,118 Datasheet
In Stock4,245
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
JESD-609 Code: e4
Maximum Power Dissipation (Abs): 2 W
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 3 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 2
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