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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | PHP212L |
Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G8; |
Datasheet | PHP212L Datasheet |
In Stock | 334 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 4 A |
JEDEC-95 Code: | MS-012AA |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 30 V |
Qualification: | Not Qualified |
Maximum Power Dissipation (Abs): | 2.6 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | LOW THRESHOLD |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .12 ohm |