PHT8N06T/T3 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PHT8N06T/T3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ESD PROTECTED; Maximum Pulsed Drain Current (IDM): 40 A; Maximum Drain-Source On Resistance: .08 ohm;
Datasheet	PHT8N06T/T3 Datasheet
In Stock	3,276

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	30 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.5 A
Maximum Pulsed Drain Current (IDM):	40 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	ESD PROTECTED
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.08 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,276	-	-

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