PHX3055L by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PHX3055L
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 25 mJ; Maximum Drain-Source On Resistance: .18 ohm; Terminal Position: SINGLE;
Datasheet	PHX3055L Datasheet
In Stock	4,108

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	25 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	9.4 A
Maximum Pulsed Drain Current (IDM):	26 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.18 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,108	-	-

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