NXP Semiconductors - PMBF5484TRL13

  1. Home
  2. NXP Semiconductors - PMBF5484TRL13
PMBF5484TRL13 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PMBF5484TRL13
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet PMBF5484TRL13 Datasheet
In Stock750
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Maximum Feedback Capacitance (Crss): 1 pF
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
750 - -

Popular Products

Category Top Products

BLS73135L-350P by NXP Semiconductors

BLS73135L-350P

NXP Semiconductors

RF Small Signal Field-Effect Transistors;
MMBF4416LT1G by Onsemi

MMBF4416LT1G

Onsemi

MMBF4416LT1G by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage and 10dB power gain, ideal for amplifier applications. It operates in depletion mode at ultra-high frequencies, with a max power dissipation of 0.225W. The transistor features a gull wing terminal form and tin finish, suitable for surface mount configurations in small outline packages.
2SK1243 by Onsemi

2SK1243

Onsemi

N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Drain Current (Abs) (ID): .06 A;
933912910215 by NXP Semiconductors

933912910215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Qualification: Not Qualified; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
BF511-T by NXP Semiconductors

BF511-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
2N3823 by Thomson-csf Semiconductors

2N3823

Thomson-csf Semiconductors

N-CHANNEL; Surface Mount: NO; Transistor Element Material: SILICON; No. of Elements: 1; JEDEC-95 Code: TO-72; No. of Terminals: 4;
BF545C,215 by NXP Semiconductors

BF545C,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Finish: TIN; Qualification: Not Qualified;
BF513,215 by NXP Semiconductors

BF513,215

NXP Semiconductors

The NXP Semiconductors BF513,215 is a single N-channel RF FET with a max power dissipation of 0.25W and operating temperature of 150°C. Ideal for amplifier applications in the very high frequency band, it features a min DS breakdown voltage of 20V and terminal finish in Tin (Sn).
3SK168B by Onsemi

3SK168B

Onsemi

3SK168B by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.25W. Ideal for applications requiring METAL SEMICONDUCTOR technology, operating up to 125 °C.
BF1211 by NXP Semiconductors

BF1211

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
BF510TRL13 by NXP Semiconductors

BF510TRL13

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Field Effect Transistor Technology: JUNCTION; Terminal Finish: TIN;
934028870115 by NXP Semiconductors

934028870115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 2; Minimum DS Breakdown Voltage: 7 V;
3N205 by Texas Instruments

3N205

Texas Instruments

3N205 by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DUAL GATE mode, it offers 0.05A Drain Current and 0.36W Power Dissipation. With METAL-OXIDE SEMICONDUCTOR technology, it operates at up to 200°C temperature.
BF981 by NXP Semiconductors

BF981

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: DUAL GATE, DEPLETION MODE; JESD-30 Code: O-PRDB-F4;
BF909T/R by NXP Semiconductors

BF909T/R

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PDSO-G4; Package Body Material: PLASTIC/EPOXY;
BF990AR by NXP Semiconductors

BF990AR

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Case Connection: SOURCE; Operating Mode: DUAL GATE, DEPLETION MODE;
BF960 by NXP Semiconductors

BF960

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Terminal Form: FLAT;
BF510-T by NXP Semiconductors

BF510-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3; No. of Elements: 1;
934063997115 by NXP Semiconductors

934063997115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 6 V;
BF545A-TAPE-7 by NXP Semiconductors

BF545A-TAPE-7

NXP Semiconductors

BF545A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.