NXP Semiconductors - PMDXB600UNEZ

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PMDXB600UNEZ by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMDXB600UNEZ
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.025 W; Maximum Drain Current (Abs) (ID): .6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Datasheet PMDXB600UNEZ Datasheet
In Stock22,504
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 4.025 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .6 A
Maximum Drain Current (Abs) (ID): .6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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