NXP Semiconductors - PMWD26UN,518

PMWD26UN,518 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMWD26UN,518
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 7800 ohm;
Datasheet PMWD26UN,518 Datasheet
In Stock4,138
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.2 A
JEDEC-95 Code: MO-153AB
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 7800 ohm
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