NXP Semiconductors - PTC4001T

  1. Home
  2. NXP Semiconductors - PTC4001T
PTC4001T by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PTC4001T
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .25 A; Transistor Application: AMPLIFIER; JESD-30 Code: O-CRFM-F2;
Datasheet PTC4001T Datasheet
In Stock3,174
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .25 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: NO
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 16 V
Terminal Position: RADIAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CRFM-F2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Additional Features: DIFFUSED EMITTER BALLAST RESISTOR
Highest Frequency Band: C BAND
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,174 - -

Popular Products

Category Top Products

MRFX035H-2MHZ by NXP Semiconductors

MRFX035H-2MHZ

NXP Semiconductors

RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MSC81010 by STMicroelectronics

MSC81010

STMicroelectronics

STMicroelectronics' MSC81010 is a NPN RF BJT with 29W power dissipation, ideal for L Band amplification. Featuring 1A max collector current, hFE of 15, and 10pF collector-base capacitance, it operates up to 200 °C. The package is ceramic-metal co-fired with a round shape and flat terminals for post/stud mounting.
2SC2782 by Asi Semiconductor

2SC2782

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; Terminal Position: UNSPECIFIED;
BLU30/12 by NXP Semiconductors

BLU30/12

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 6 dB;
MRF658 by Motorola

MRF658

Motorola

MRF658 by Motorola is a NPN RF BJT transistor with 4.15 dB min power gain, suitable for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 175 W, operates at up to 150°C, and can handle a collector current of 15 A.
SD1732(TDS595) by STMicroelectronics

SD1732(TDS595)

STMicroelectronics

The SD1732 (TDS595) by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max collector current of 2.6 A, operates up to 200 °C, and supports ultra-high frequency bands. Its flat terminal design allows for easy surface mounting in compact setups.
933779950112 by NXP Semiconductors

933779950112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BLU56T/R by NXP Semiconductors

BLU56T/R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 16 V; Terminal Position: DUAL;
2SC2639 by Toshiba

2SC2639

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 3.5 A; Maximum Operating Temperature: 175 Cel;
PZ2327B15U by NXP Semiconductors

PZ2327B15U

NXP Semiconductors

PZ2327B15U by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 32W, operates at frequencies in the S band, and withstands temperatures up to 200 °C. Its flat terminal design ensures efficient surface mounting.
NE69039 by Renesas Electronics

NE69039

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 6 V;
SD1487 by STMicroelectronics

SD1487

STMicroelectronics

STMicroelectronics' SD1487 is a NPN RF Power BJT with 18V VCE, 20A IC, and high-frequency band. Ideal for amplifier applications, it features a plastic/epoxy package, single configuration, and radial terminal position in a round shape. Operating up to 200 °C, it has a flange mount style with 4 terminals.
BLV58 by NXP Semiconductors

BLV58

NXP Semiconductors

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 87 W; Maximum Collector Current (IC): 4 A; Minimum Power Gain (Gp): 10 dB;
BFG741TRL by NXP Semiconductors

BFG741TRL

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .3 A; No. of Elements: 1;
2SC2640 by Toshiba

2SC2640

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 6 A; Terminal Form: FLAT;
ISL73096RHX/SAMPLE by Renesas Electronics

ISL73096RHX/SAMPLE

Renesas Electronics

RF Power Bipolar Transistors;
2N6080 by Motorola

2N6080

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12 W; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 18 V;
MRF897 by NXP Semiconductors

MRF897

NXP Semiconductors

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Collector Current (IC): 4 A; Maximum Collector-Base Capacitance: 28 pF;
MX0912B250Y by NXP Semiconductors

MX0912B250Y

NXP Semiconductors

MX0912B250Y by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max collector-emitter voltage of 20V, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band surface mount designs.
PZ1418B15U by NXP Semiconductors

PZ1418B15U

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Transistor Application: AMPLIFIER; Maximum Collector-Emitter Voltage: 15 V;