NXP Semiconductors - SA5200D-T

  1. Home
  2. NXP Semiconductors - SA5200D-T
SA5200D-T by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number SA5200D-T
Description WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1200 MHz; Maximum Operating Temperature: 85 Cel;
Datasheet SA5200D-T Datasheet
In Stock2,103
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 20 dBm
Minimum Operating Frequency: 0 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1200 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,103 - -

Popular Products

Category Top Products

HMC460LC5TR by Hittite Microwave

HMC460LC5TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;
ECG008B-G by Qorvo

ECG008B-G

Qorvo

Qorvo's ECG008B-G is a wide band medium power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 15 dBm CW input power. Ideal for applications requiring high performance in RF & microwave systems.
HMC8413LP2FE by Analog Devices

HMC8413LP2FE

Analog Devices

HMC8413LP2FE by Analog Devices is a PHEMT RF amplifier with 17 dB gain, operating from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, suitable for wideband medium power applications. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it is ideal for RF and microwave systems requiring high performance in a small form factor.
MAX2659ELT/V+T by Maxim Integrated

MAX2659ELT/V+T

Maxim Integrated

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;
AM-147-PIN by Tyco Electronics M/a-com

AM-147-PIN

Tyco Electronics M/a-com

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;
HMC902LP3ETR by Hittite Microwave

HMC902LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;
HMC441LP3 by Hittite Microwave

HMC441LP3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 6500 MHz;
M57710-A by Mitsubishi Electric

M57710-A

Mitsubishi Electric

Mitsubishi Electric's M57710-A is a hybrid module for RF applications. With 26 dBm CW input power, it operates in the narrow band from 156-160 MHz. Featuring a max VSWR of 2.8, it is suitable for high-power amplification in various communication systems.
MGA-86576 by Agilent Technologies

MGA-86576

Agilent Technologies

Agilent Technologies' MGA-86576 is a RF & Microwave Amplifier with GaAs technology, 5V power supply, and 22mA max current. It has a metal package for surface mount applications in various electronic devices.
HMC451LC3 by Hittite Microwave

HMC451LC3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
BGA6130,118 by NXP Semiconductors

BGA6130,118

NXP Semiconductors

NXP Semiconductors' BGA6130,118 is an RF & Microwave Amplifier with 3.6V power supply, 8 terminals, and 250mA max supply current. It features a plastic/epoxy package body material and nickel palladium gold terminal finish. Ideal for surface mount applications in various electronic devices.
A2I09VD015NR1 by NXP Semiconductors

A2I09VD015NR1

NXP Semiconductors

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;
QPA2735TR7X by Qorvo

QPA2735TR7X

Qorvo

Qorvo's QPA2735TR7X is a GAAS RF amplifier with 26dB gain, operating from 13.75-18 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, ideal for wideband low-power applications in RF & microwave systems. The component features surface mounting and a plastic/epoxy package body material.
XB1007-QT-0G0T by M/a-com Technology Solutions

XB1007-QT-0G0T

M/a-com Technology Solutions

XB1007-QT-0G0T by M/a-com Technology Solutions is a GAAS wide band medium power RF amplifier with a gain of 23 dB. It operates at frequencies ranging from 4000 MHz to 11000 MHz and can handle a max input power of 20 dBm. This surface mount component is suitable for applications in RF and microwave amplification.
TQP7M9102 by Triquint Semiconductor

TQP7M9102

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 400 MHz; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 27 dBm; Maximum Operating Frequency: 4000 MHz; Construction: COMPONENT;
NBB-310 by Rf Micro Devices

NBB-310

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; No. of Functions: 1;
BGB719N7ESDE6327XTMA1 by Infineon Technologies

BGB719N7ESDE6327XTMA1

Infineon Technologies

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.
SP9711 by Amplifonix

SP9711

Amplifonix

WIDE BAND LOW POWER; Minimum Operating Frequency: 1000 MHz; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT;
HMC287MS8ETR by Analog Devices

HMC287MS8ETR

Analog Devices

Analog Devices' HMC287MS8ETR is a GaAs RF amplifier with 3V supply, 15mA max current, and -40 to 85°C operating range. Ideal for narrowband low-power applications, it features a surface-mount package suitable for RF and microwave circuits.
MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.