Onsemi - 5LN01SP

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5LN01SP by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 5LN01SP
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
Datasheet 5LN01SP Datasheet
In Stock947
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .1 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
No. of Terminals: 3
Minimum DS Breakdown Voltage: 50 V
Maximum Power Dissipation (Abs): .25 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .1 A
Maximum Drain-Source On Resistance: 7.8 ohm
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