AFGY160T65SPD-B4 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	AFGY160T65SPD-B4
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 882 W; Maximum Collector Current (IC): 240 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	AFGY160T65SPD-B4 Datasheet
In Stock	1,596

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	240 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.3 V
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Maximum Power Dissipation (Abs):	882 W
Maximum Collector-Emitter Voltage:	650 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	AEC-Q101
Maximum VCEsat:	2.05 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,596	$12.570	$20,061.720

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