BBS3002-TL-1E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	BBS3002-TL-1E
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Drain Current (ID): 100 A; Case Connection: DRAIN;
Datasheet	BBS3002-TL-1E Datasheet
In Stock	1,418

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	100 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	90 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.009 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	340 mJ
Other Names:	BBS3002-TL-1EOSCT BBS3002-TL-1EOSTR BBS3002-TL-1EOSDKR BBS3002-TL-1E-ND
Maximum Feedback Capacitance (Crss):	950 pF
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	100 A
Peak Reflow Temperature (C):	245

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,418	-	-

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