CPH6347-TL-W by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	CPH6347-TL-W
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 6 A;
Datasheet	CPH6347-TL-W Datasheet
In Stock	1,025

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	6 A
Maximum Pulsed Drain Current (IDM):	24 A
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.6 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.039 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	CPH6347-TL-W-ND 2156-CPH6347-TL-W-OS CPH6347-TL-WOSCT CPH6347-TL-WOSTR ONSONSCPH6347-TL-W CPH6347-TL-WOSDKR
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e6
Minimum DS Breakdown Voltage:	20 V
Additional Features:	ESD PROTECTED
Maximum Drain Current (Abs) (ID):	6 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,025	$0.183	$187.575

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