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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | ECH8601M-C-TL-H |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH; |
| Datasheet | ECH8601M-C-TL-H Datasheet |
| In Stock | 1,052 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: | 2832-ECH8601M-C-TL-H |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 8 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| JESD-609 Code: | e6 |
| Maximum Power Dissipation (Abs): | 1.6 W |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 8 A |
| Moisture Sensitivity Level (MSL): | 1 |









