ECH8601M-TL-H by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	ECH8601M-TL-H
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 8 A; Minimum DS Breakdown Voltage: 24 V;
Datasheet	ECH8601M-TL-H Datasheet
In Stock	625

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	60 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
JESD-609 Code:	e6
No. of Terminals:	8
Minimum DS Breakdown Voltage:	24 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.03 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
625	$0.255	$159.375

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