Onsemi - ECH8601M-TL-H

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ECH8601M-TL-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number ECH8601M-TL-H
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 8 A; Minimum DS Breakdown Voltage: 24 V;
Datasheet ECH8601M-TL-H Datasheet
In Stock625
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 60 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 8
Minimum DS Breakdown Voltage: 24 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .03 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
625 $0.255 $159.375

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