Onsemi - ECH8655R-R-TL-H

  1. Home
  2. Onsemi - ECH8655R-R-TL-H
ECH8655R-R-TL-H by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number ECH8655R-R-TL-H
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (Abs) (ID): 9 A; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet ECH8655R-R-TL-H Datasheet
In Stock1,919
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 9 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
Maximum Power Dissipation (Abs): 1.5 W
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 9 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,919 - -

Popular Products

Category Top Products

IRFZ44NS by Transys Electronics

IRFZ44NS

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING; No. of Terminals: 2;
2N7000 by Telcom Semiconductor

2N7000

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: Tin/Lead (Sn/Pb);
FDS4935A by Fairchild Semiconductor

FDS4935A

Fairchild Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
IRF3415STRLPBF by Infineon Technologies

IRF3415STRLPBF

Infineon Technologies

IRF3415STRLPBF by Infineon is a N-CHANNEL FET with 150V DS Breakdown Voltage and 43A Max Drain Current. It is used for SWITCHING applications, featuring a built-in DIODE, 0.042 ohm Max RDS(on), and 150A IDM. The transistor operates in ENHANCEMENT MODE, has a GULL WING terminal form, and comes in a SMALL OUTLINE package style.
IRF3415STRLPBF by International Rectifier

IRF3415STRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
2N7002 by Sipex

2N7002

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
BSC028N06NSTATMA1 by Infineon Technologies

BSC028N06NSTATMA1

Infineon Technologies

BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
IRF7493TRPBF-1 by Infineon Technologies

IRF7493TRPBF-1

Infineon Technologies

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
IRLML2502PBF by International Rectifier

IRLML2502PBF

International Rectifier

IRLML2502PBF by International Rectifier is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 33A and ID of 4.2A, with 0.045 ohm RDS(ON). This ENHANCEMENT MODE transistor operates at up to 150°C, making it suitable for various power management tasks.
IRF7309TRPBF by Infineon Technologies

IRF7309TRPBF

Infineon Technologies

IRF7309TRPBF by Infineon is a Power FET with N-Channel and P-Channel types, suitable for switching applications. It features 2 elements with built-in diode, a max drain current of 4A, and a min DS breakdown voltage of 30V. With a package style of small outline and operating temperature up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
DMP4051LK3-13 by Diodes Incorporated

DMP4051LK3-13

Diodes Incorporated

DMP4051LK3-13 by Diodes Inc. is a P-CHANNEL FET with 40V DS Breakdown Voltage, 28.9A IDM, and 0.051 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages, operating at up to 150°C with single terminal position and built-in diode.
FDB3632 by Onsemi

FDB3632

Onsemi

Onsemi's FDB3632 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 12A Drain Current, and 0.009 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates b/w -55 to 175 °C with an EAS of 337 mJ.
IRLML0040TRPBF by International Rectifier

IRLML0040TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;
AUIRF540Z by Infineon Technologies

AUIRF540Z

Infineon Technologies

AUIRF540Z by Infineon Technologies is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features 140A max pulsed drain current and 0.0265 ohm max drain-source resistance. Operating in enhancement mode, it has a 175°C max temp rating and 92W power dissipation capability.
SI7145DP-T1-GE3 by Vishay Intertechnology

SI7145DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7145DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 100A and EAS of 125mJ, this MOSFET operates in ENHANCEMENT MODE. With 0.0026 ohm RDS(on), it can handle up to 104W power dissipation at 150°C.
2N7002BKMB,315 by NXP Semiconductors

2N7002BKMB,315

NXP Semiconductors

2N7002BKMB,315 by NXP Semiconductors is a single N-channel power FET with an operating mode of enhancement. It has a max drain current of 0.45A and a max power dissipation of 0.715W. This MOSFET is suitable for applications requiring high efficiency and temperature resistance up to 150°C.
IRF3205ZPBF by Infineon Technologies

IRF3205ZPBF

Infineon Technologies

IRF3205ZPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 440A IDM, 250mJ EAS, and 0.0065 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 170W at 175°C.
FDD4243 by Fairchild Semiconductor

FDD4243

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
DMG2305UX-7 by Diodes Incorporated

DMG2305UX-7

Diodes Incorporated

DMG2305UX-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 4.2A max drain current, and 0.052 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 150°C operating temp. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
SI7461DP-T1-GE3 by Vishay Intertechnology

SI7461DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7461DP-T1-GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 8.6A Drain Current, and 0.0145 ohm On Resistance. Ideal for power management applications due to its 60A Pulsed Drain Current capability and 125mJ Avalanche Energy Rating in a small outline package.