Onsemi - ECH8655R-R-TL-H

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ECH8655R-R-TL-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number ECH8655R-R-TL-H
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (Abs) (ID): 9 A; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet ECH8655R-R-TL-H Datasheet
In Stock1,056
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 9 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
Maximum Power Dissipation (Abs): 1.5 W
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 9 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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