EFC2J004NUZTDG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	EFC2J004NUZTDG
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	EFC2J004NUZTDG Datasheet
In Stock	899

NAME	DESCRIPTION
Other Names:	488-EFC2J004NUZTDGTR 488-EFC2J004NUZTDGDKR 2156-EFC2J004NUZTDG EFC2J004NUZTDG-ND 488-EFC2J004NUZTDGCT
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.5 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-PBCC-N6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
899	$0.126	$113.274

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