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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | EFC2J022NUZTCG |
| Description | N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | EFC2J022NUZTCG Datasheet |
| In Stock | 559 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMMON DRAIN, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 10 |
| Minimum DS Breakdown Voltage: | 12 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | R-PBGA-B10 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | DEPLETION MODE |
| Maximum Operating Temperature: | 150 Cel |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Power Dissipation Ambient: | 1.8 W |









