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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | EFC2K101NUZTDG |
| Description | N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel; |
| Datasheet | EFC2K101NUZTDG Datasheet |
| In Stock | 872 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
EFC2K101NUZTDGOSCT EFC2K101NUZTDGOSTR EFC2K101NUZTDGOSDKR |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 1.4 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-PBCC-N6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | DEPLETION MODE |
| Maximum Operating Temperature: | 150 Cel |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









