Onsemi - EFC4611

  1. Home
  2. Onsemi - EFC4611
EFC4611 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number EFC4611
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 150 Cel;
Datasheet EFC4611 Datasheet
In Stock1,557
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.6 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,557 - -

Popular Products

Category Top Products

FDB2532 by Fairchild Semiconductor

FDB2532

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Qualification: Not Qualified; Maximum Operating Temperature: 175 Cel;
IRFH5015TRPBF by Infineon Technologies

IRFH5015TRPBF

Infineon Technologies

IRFH5015TRPBF by Infineon Technologies is a N-CHANNEL FET with 150V DS Breakdown Voltage and 220A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.031 ohm RDS(on), and 250W Pdiss. Operating in ENHANCEMENT MODE, this transistor has a max temp of 150°C and matte tin finish.
FDBL86062-F085 by Onsemi

FDBL86062-F085

Onsemi

FDBL86062-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 429W.
IRF3710STRLPBF by Infineon Technologies

IRF3710STRLPBF

Infineon Technologies

IRF3710STRLPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 180A IDM, 57A ID, and 0.023 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation.
IRF540SPBF by International Rectifier

IRF540SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): SMALL OUTLINE;
IRFP4668PBF by Infineon Technologies

IRFP4668PBF

Infineon Technologies

IRFP4668PBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It has a max IDM of 520A and EAS of 760mJ, suitable for SWITCHING applications. With 0.0097 ohm RDS(on) and 520W Pdiss, it operates in ENHANCEMENT MODE at up to 175°C.
NVF2955T1G by Onsemi

NVF2955T1G

Onsemi

The Onsemi NVF2955T1G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 17A and EAS of 225mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and 0.185 ohm RDS(on), it offers efficient power dissipation up to 2.3W at 175°C.
AOD4185 by Alpha & Omega Semiconductor

AOD4185

Alpha & Omega Semiconductor

AOD4185 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage, 115A IDM, and 0.015 ohm RDS(ON). Ideal for power management applications requiring high drain current capabilities in a compact SMALL OUTLINE package.
IRFZ44NS by International Rectifier Hirel Products

IRFZ44NS

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Terminal Position: SINGLE;
IRF740APBF by Vishay Siliconix

IRF740APBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; No. of Terminals: 3; Avalanche Energy Rating (EAS): 630 mJ;
IRFD110PBF by Vishay Intertechnology

IRFD110PBF

Vishay Intertechnology

Power Field-Effect Transistors; Qualification: Not Qualified; Terminal Finish: PURE MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 1 A; Peak Reflow Temperature (C): 260;
IRF540NLPBF by International Rectifier

IRF540NLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain Current (ID): 33 A; Maximum Time At Peak Reflow Temperature (s): 30;
IRLML2502GTRPBF by International Rectifier

IRLML2502GTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 33 A;
CSD18563Q5AT by Texas Instruments

CSD18563Q5AT

Texas Instruments

CSD18563Q5AT by Texas Instruments is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 96A IDM and 146mJ EAS, operating in the -55 to 150 °C temperature range. This SINGLE transistor has a 0.0108 ohm Drain-Source Resistance and comes in a SMALL OUTLINE package style.
SQJ431AEP-T1_GE3 by Vishay Intertechnology

SQJ431AEP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ431AEP-T1_GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, 37A IDM, and 0.315 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
BSP297H6327XTSA1 by Infineon Technologies

BSP297H6327XTSA1

Infineon Technologies

Infineon's BSP297H6327XTSA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for power applications. Features include 2.64A IDM, 1.8Ω RDS(on), and AEC-Q101 compliance. Suitable for enhancement mode operation in automotive electronics due to its high reliability and performance.
FDP20N50F by Fairchild Semiconductor

FDP20N50F

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 1110 mJ;
IRF840SPBF by Vishay Siliconix

IRF840SPBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): 8 A; Qualification: Not Qualified;
IRFR9024PBF by Vishay Siliconix

IRFR9024PBF

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 60 V;
FQD7P20TM by Fairchild Semiconductor

FQD7P20TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;