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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | EFC6605R-TR |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain Current (ID): 10 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 10 A; |
| Datasheet | EFC6605R-TR Datasheet |
| In Stock | 624 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
EFC6605R-TROSTR EFC6605R-TROSDKR 2832-EFC6605R-TR ONSONSEFC6605R-TR 2156-EFC6605R-TR-OS EFC6605R-TR-ND EFC6605R-TROSCT |
| Maximum Power Dissipation (Abs): | 1.6 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 10 A |
| Maximum Drain Current (Abs) (ID): | 10 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |








