Onsemi - FDD14AN06LA0

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FDD14AN06LA0 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDD14AN06LA0
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 55 mJ;
Datasheet FDD14AN06LA0 Datasheet
In Stock1,506
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 218 ns
Maximum Drain Current (ID): 9.5 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 111 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0146 ohm
Avalanche Energy Rating (EAS): 55 mJ
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 50 A
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Pricing (USD)

Qty. Unit Price Ext. Price
1,506 $1.000 $1,506.000

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