Onsemi - FDG6304P-F169

  1. Home
  2. Onsemi - FDG6304P-F169
FDG6304P-F169 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number FDG6304P-F169
Description Small Signal Field-Effect Transistors;
Datasheet FDG6304P-F169 Datasheet
In Stock706
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
706 - -

Popular Products

Category Top Products

BSS83PH6327XTSA1 by Infineon Technologies

BSS83PH6327XTSA1

Infineon Technologies

Infineon's BSS83PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage. It features SINGLE configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. Ideal for small outline applications requiring low on-resistance and high drain current up to 0.33A at temperatures ranging from -55°C to 150°C.
FDN327N by Onsemi

FDN327N

Onsemi

FDN327N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.07 ohm On Resistance and can handle up to 0.46W power dissipation at 150°C.
LND150N3-G by Microchip Technology

LND150N3-G

Microchip Technology

LND150N3-G by Microchip is a N-CHANNEL FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.74W power dissipation and -55 to 150°C temperature range. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
IRLL110TRPBF by Vishay Intertechnology

IRLL110TRPBF

Vishay Intertechnology

Vishay Intertechnology's IRLL110TRPBF is a N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 12A IDM, and 0.76 ohm RDS(on). With a max power dissipation of 3.1W and operating temperature up to 150°C, it is ideal for high-performance electronic devices requiring efficient switching capabilities.
2N7002K by Fairchild Semiconductor

2N7002K

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 350 W; Minimum DS Breakdown Voltage: 60 V; JESD-30 Code: R-PDSO-G3;
BSS308PEH6327XTSA1/SAMPLE by Infineon Technologies

BSS308PEH6327XTSA1/SAMPLE

Infineon Technologies

Small Signal Field-Effect Transistors;
SI2300DS-T1-GE3 by Vishay Intertechnology

SI2300DS-T1-GE3

Vishay Intertechnology

SI2300DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 3.6A max drain current. Ideal for switching applications, it operates in enhancement mode with a built-in diode, offering 0.068 ohm max on-resistance and 19pF feedback capacitance.
SI1553CDL-T1-GE3 by Vishay Intertechnology

SI1553CDL-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI1553CDL-T1-GE3 is a Small Signal FET with N/P-channel, 2 elements, and built-in diode. Ideal for switching applications, it operates in enhancement mode with max drain current of 0.7A and on-resistance of 0.39 ohm. With a temp range of -55 to 150°C, this MOSFET has a peak reflow temp of 260°C and feedback capacitance of 6pF.
BSS123 by Siemens

BSS123

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON;
FDC5614PD87Z by Fairchild Semiconductor

FDC5614PD87Z

Fairchild Semiconductor

FDC5614PD87Z by Fairchild Semiconductor is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3A. The transistor operates in enhancement mode and has a max power dissipation of 1.6W at a max operating temperature of 150°C.
2N7000 by National Semiconductor

2N7000

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; Minimum DS Breakdown Voltage: 60 V;
BSS138K by Jiangsu Changjiang Electronics Technology

BSS138K

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Form: GULL WING; Terminal Position: DUAL;
MMBFJ112 by Fairchild Semiconductor

MMBFJ112

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: DEPLETION MODE; No. of Terminals: 3;
FDS9945 by Onsemi

FDS9945

Onsemi

FDS9945 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 3.5A max drain current, ideal for switching applications. It features a separate configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. The small outline package style and max operating temperature of 175°C make it suitable for various electronic designs.
ZVN2110A by Zetex Plc

ZVN2110A

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL;
BSS123L6327 by Infineon Technologies

BSS123L6327

Infineon Technologies

Infineon's BSS123L6327 is a N-CHANNEL FET with 100V DS Breakdown Voltage and 0.17A Drain Current. Ideal for small outline applications, it operates in Enhancement Mode with 6ohm On Resistance. With Matte Tin finish, it can withstand -55 to 150 °C temperatures.
BSS84 by Diodes Incorporated

BSS84

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
NUD3124LT1G by Onsemi

NUD3124LT1G

Onsemi

NUD3124LT1G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 0.15A ID, and 1.4 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features built-in diode and resistor in a small outline package for surface mount assembly.
TN2404K-T1-E3 by Vishay Intertechnology

TN2404K-T1-E3

Vishay Intertechnology

Vishay Intertechnology TN2404K-T1-E3 is a N-CHANNEL FET with 240V DS Breakdown Voltage, 0.2A Drain Current, and 4 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.
NTGS5120PT1G by Onsemi

NTGS5120PT1G

Onsemi

NTGS5120PT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max ID of 2.5A and 0.111 ohm RDS(on), it offers high performance in a small outline package style.