Onsemi - FDMC86265P

FDMC86265P by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMC86265P
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; No. of Terminals: 8; Terminal Form: NO LEAD;
Datasheet FDMC86265P Datasheet
In Stock7,804
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1 A
Maximum Pulsed Drain Current (IDM): 2 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.2 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 6 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 150 V
Maximum Drain Current (Abs) (ID): 1.8 A
Peak Reflow Temperature (C): 260
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