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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FDMD8430 |
| Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29 W; Maximum Turn Off Time (toff): 150 ns; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | FDMD8430 Datasheet |
| In Stock | 1,467 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 36 ns |
| Maximum Drain Current (ID): | 28 A |
| Maximum Pulsed Drain Current (IDM): | 562 A |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 29 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 150 ns |
| JESD-30 Code: | R-PDSO-N8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Maximum Power Dissipation Ambient: | 2.1 W |
| Maximum Drain-Source On Resistance: | .00212 ohm |
| Avalanche Energy Rating (EAS): | 96 mJ |
| Maximum Feedback Capacitance (Crss): | 160 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 30 V |









