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Manufacturer | Onsemi |
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Manufacturer's Part Number | FGH75T65UPD |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 150 A; Nominal Turn Off Time (toff): 197 ns; |
Datasheet | FGH75T65UPD Datasheet |
In Stock | 1,993 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 150 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Maximum Rise Time (tr): | 56 ns |
Transistor Application: | POWER CONTROL |
Maximum Turn On Time (ton): | 98 ns |
Maximum Gate-Emitter Threshold Voltage: | 7.5 V |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Terminal Finish: | Matte Tin (Sn) - annealed |
Nominal Turn Off Time (toff): | 197 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 375 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 87 ns |
Package Style (Meter): | FLANGE MOUNT |
Maximum Turn Off Time (toff): | 249 ns |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 175 Cel |
Maximum Fall Time (tf): | 33 ns |
JEDEC-95 Code: | TO-247 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Maximum Collector-Emitter Voltage: | 650 V |
Additional Features: | RC-IGBT |
Maximum Gate-Emitter Voltage: | 20 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | 2.3 V |