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Manufacturer | Onsemi |
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Manufacturer's Part Number | FGY75T95SQDT |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 434 W; Maximum Collector Current (IC): 150 A; Package Shape: RECTANGULAR; |
Datasheet | FGY75T95SQDT Datasheet |
In Stock | 1,120 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 150 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6.4 V |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 198.8 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 434 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 89.6 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 175 Cel |
JEDEC-95 Code: | TO-247 |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Maximum Collector-Emitter Voltage: | 950 V |
Additional Features: | RC-IGBT |
Maximum Gate-Emitter Voltage: | 20 V |
Maximum VCEsat: | 2.11 V |