Onsemi - MJE800T

MJE800T by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MJE800T
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A;
Datasheet MJE800T Datasheet
In Stock162
NAME DESCRIPTION
Nominal Transition Frequency (fT): 1 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 4 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 50 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 750
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
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