Onsemi - MTY14N100E

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MTY14N100E by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MTY14N100E
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Pulsed Drain Current (IDM): 49 A; Package Shape: RECTANGULAR;
Datasheet MTY14N100E Datasheet
In Stock1,876
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 49 A
Sub-Category: FET General Purpose Powers
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 300 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .8 ohm
Avalanche Energy Rating (EAS): 980 mJ
JEDEC-95 Code: TO-264AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 14 A
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Pricing (USD)

Qty. Unit Price Ext. Price
1,876 $3.990 $7,485.240

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