NCV8415STT1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NCV8415STT1G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 88 mJ;
Datasheet	NCV8415STT1G Datasheet
In Stock	1,798

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	20000 ns
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	2.2 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	90000 ns
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.12 ohm
Avalanche Energy Rating (EAS):	88 mJ
JEDEC-95 Code:	TO-261AA
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	42 V
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,798	$0.990	$1,780.020

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